Internal structuring of gallium arsenide using short laser pulses.
Internal structuring of gallium arsenide using short laser pulses.
复制标题
使用短激光脉冲进行砷化镓的内部结构。
作者：
Amlan Das;Andong Wang;O. Utéza;D. Grojo
半导体内激光书写作为先进微技术三维集成的可能途径而备受关注。在这种情况下，砷化镓（GaAs）是一种激光内部修饰（LIM）的最佳条件尚未确定的材料。我们通过使用固定波长1550纳米的激光脉冲来解决这个问题。研究了一个大的参数空间，包括对脉冲能量、脉冲持续时间（从飞秒到纳秒）和聚焦条件的响应。我们报告了用紧密聚焦的纳秒脉冲可以实现定义良好且可重复的内部修饰。测量的写入阈值被系统地与硅（Si）中获得的阈值进行了比较，硅（Si）是一种更广泛研究的材料。与Si相比，我们还观察到GaAs更容易受到影响修饰响应的丝化效应的影响。所报道的砷化镓LIM的具体观察结果将促进电子或光子学应用的未来工艺发展。
Laser writing inside semiconductors attracts attention as a possible route for three-dimensional integration in advanced micro technologies. In this context, gallium arsenide (GaAs) is a material for which the best conditions for laser internal modification (LIM) have not been established yet. We address this question by using laser pulses at a fixed wavelength of 1550-nm. A large parameter space is investigated including the response to the applied pulse energy, pulse duration (from femtosecond to nanosecond) and the focusing conditions. We report that well-defined and reproducible internal modifications are achievable with tightly focused nanosecond pulses. The measured writing thresholds are systematically compared to those obtained in silicon (Si), a more extensively studied material. In comparison to Si, we also observe that GaAs is more prone to filamentation effects affecting the modification responses. The reported specific observations for LIM of GaAs should facilitate the future process developments for applications in electronics or photonics.