Cu CVD from Copper(II) Hexafluoroacetylacetonate I . A Cold Wall Reactor Design, Blanket Growth Rate, and Natural Selectivity
Cu CVD from Copper(II) Hexafluoroacetylacetonate I . A Cold Wall Reactor Design, Blanket Growth Rate, and Natural Selectivity
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六氟乙酰丙酮铜 (II) I 的 Cu CVD 法。
DOI：
10.1149/1.2048432
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发表时间：
1995
影响因子：
3.9
通讯作者：
D. Temple
中科院分区：
文献类型：
--
作者：
Y. D. Chen;A. Reisman;I. Turlik;D. Temple
设计和建造了一个常压冷壁反应器，旨在研究 Cu(hfa) 2 的热分解作为破损铜互连线的修复技术，使用热偏置基板和激光将局部区域加热到适合纯铜沉积的温度。本文对设计进行了讨论，并讨论了氩气和合成气体中的理论和实验铜沉积生长速率。目前工作的主要目标是系统的设计、毯层生长速率特性的确定以及在两种相邻介电材料SiO 2 和聚酰亚胺上发生自然选择性的趋势的检查。在自然选择性的研究中，使用氩气作为载体/稀释剂，在 340°C 降至 270°C 或更低的基板温度下，在 SiO 2 上观察到沉积，但在连续的聚酰亚胺上没有观察到沉积，并使用氩/氢混合物 (9:1) 作为载体/稀释剂，在 270°C 降至 150°C 下观察到沉积。
An atmospheric pressure cold wall reactor was designed and built for the purpose of studying the thermal decomposition of Cu(hfa) 2 as a repair technique for broken copper interconnection lines, using thermally biased substrates, and a laser to heat localized areas to a temperature appropriate for the deposition of pure copper. In this paper, a discussion of the design is presented, and theoretical and experimental blanket copper deposition growth rates in argon and forming gas are discussed. The primary goals of the present work were the design of the system, the determination of blanket growth rate characteristics, and examination of the tendency for natural selectivity to occur on two contiguous dielectric materials, SiO 2 and polyimide. In studies of natural selectivity, deposition was observed on SiO 2 , but not on contiguous polyimide at substrate temperatures of 340°C down to 270°C or lower, using argon as a carrier/diluent, and from 270°C down to 150°C, using argon/hydrogen mixtures (9 :1) as a carrier/diluent.