Preparation of Cu2Se Single Crystals and Investigation of their Electrical Properties
Preparation of Cu2Se Single Crystals and Investigation of their Electrical Properties
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DOI：
10.1002/pssb.19670210203
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发表时间：
1967
影响因子：
1.6
通讯作者：
G. B. Abdullaev;Z. A. Aliyarova;G. A. Asadov
中科院分区：
文献类型：
--
作者：
G. B. Abdullaev;Z. A. Aliyarova;G. A. Asadov
研究了 Cu2Se 单晶的电导率 σ、热电动势 α 和霍尔常数 R。还研究了 22 至 650 °C 范围内这些现象的温度依赖性。根据 σ 的温度依赖性，发现固有区域中的活化能 ΔE 值为 1.2 eV，而从光学吸收边获得的值为 1.3 eV。 [忽略俄语文本。]
A study is made of the electrical conductivity, σ, the thermo e.m.f., α, and the Hall constant, R, in single crystals of Cu2Se. The temperature dependence of these phenomena in the range 22 to 650 °C is also investigated. From the temperature dependence of σ a value of 1.2 eV is found for the activation energy, ΔE, in the inherent region, whereas the value obtained from the optical absorption edge is 1.3 eV. [Russian Text Ignored.]