Effect of Ionization Potential of Hole Transport Layer on Device Characteristics of Organic Light Emitting Diode with Oxygen Plasma Treated Indium Tin Oxide
Effect of Ionization Potential of Hole Transport Layer on Device Characteristics of Organic Light Emitting Diode with Oxygen Plasma Treated Indium Tin Oxide
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DOI：
10.1143/jjap.40.4720
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发表时间：
2001-07
影响因子：
1.5
通讯作者：
Y. Hashimoto;M. Hamagaki;T. Sakakibara
中科院分区：
文献类型：
--
作者：
Y. Hashimoto;M. Hamagaki;T. Sakakibara
研究了氧离子和氧电子对氧化铟锡（ITO）电极氧等离子体处理的贡献，以及它们的动能。在动能为50 eV的正氧离子处理下，有机发光二极管（OLED）的亮度随着工作电压的降低而显著增加。器件特性的变化归因于ITO表面有机污染物的有效去除，由于ITO的功函数增加，导致ITO向空穴传输层（HTL）的空穴注入增强。在电离势为5.4 eV的HTL OLED中，获得了最高的亮度和发光效率。这些结果表明，采用氧等离子体处理的ITO制备的oled可以通过选择最佳的HTL来获得最佳的器件性能。
We have investigated the contribution of the oxygen ions and electrons, and of the kinetic energy of these species on oxygen plasma treatment of indium tin oxide (ITO) electrode. In the case of the treatment by positive oxygen ions with kinetic energy of 50 eV, the luminance increased markedly with a lowering of the operating voltage in the organic light emitting diode (OLED). The change in the device characteristics was attributed to an effective removal of organic contaminants from the ITO surface, leading to enhanced hole injection from ITO to a hole transport layer (HTL) due to an increase in work function of the ITO. Moreover, the highest luminance and luminous efficiency were obtained in the OLED having HTL with ionization potential of 5.4 eV. These results have suggested that OLEDs fabricated using the oxygen plasma treated ITO can give the best device performance by the selection of an optimum HTL.