Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
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DOI：
10.1016/j.jcrysgro.2006.10.179
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发表时间：
2007-01-01
影响因子：
1.8
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Ikejiri, Keitaro;Noborisaka, Jinichiro;Fukui, Takashi
通过研究衬底取向和生长条件的依赖关系，研究了选区金属有机气相外延(MOVPE)中GaAs纳米线的生长机理。这种纳米线结构只在高温(750℃)和低砷分压条件下才在GaAsI L B衬底上形成。在不同取向的衬底上选择性生长的结构总是表现出特定的低折射率面，如{110}，{111}A和{111}B，并且这些面的出现强烈依赖于生长条件。此外，我们还观察到随着生长温度的降低和砷分压的增加，纳米线的侧壁有相当大的侧向生长，这表明生长条件可以改变生长模式。这些结果表明，SA-MOVPE生长GaAs纳米线的机制既不是催化剂，也不是氧化物，而是在生长过程中形成的小平面。(C)2006爱思唯尔B.V.保留所有权利。
We studied the growth mechanism of GaAs nanowires in selective-area metalorganic vapor phase epitaxy (MOVPE) by investigating the dependences on substrate orientations and growth conditions. The nanowire structures were formed only on GaAs (I I l)B substrate under high temperature (750 degrees C) and low arsine partial pressure conditions. Structures selectively grown on substrates with various orientations always exhibited specific low-index facets such as { 110}, {111}A, and {111}B. It was also found that the appearance of these facets depended strongly on the growth conditions. Furthermore, we have observed a considerable lateral growth on the sidewalls of the nanowires when the growth temperature was lowered and arsine partial pressure was increased, indicating that the growth mode could be changed by the growth conditions. These results demonstrate that the growth mechanism of GaAs nanowires by SA-MOVPE is neither catalyst nor oxide assisted but by the formation of facets during growth. (c) 2006 Elsevier B.V. All rights reserved.