Nanoscale engineering of radiation tolerant silicon carbide.
Nanoscale engineering of radiation tolerant silicon carbide.
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DOI：
10.1039/c2cp42342a
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发表时间：
2012-09
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影响因子：
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通讯作者：
Yanwen Zhang;M. Ishimaru;T. Varga;T. Oda;Chris Hardiman;H. Xue;Y. Katoh;S. Shannon;W. J. Weber-W.
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文献类型：
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作者：
Yanwen Zhang;M. Ishimaru;T. Varga;T. Oda;Chris Hardiman;H. Xue;Y. Katoh;S. Shannon;W. J. Weber-W.
辐射耐受性取决于微结构如何有效地去除由辐射产生的点缺陷。具有高密度堆垛层错（SFs）的工程化纳米晶SiC显著增强了晶体和空位的复合，导致辐射诱导缺陷的自修复。虽然单晶SiC在室温下容易经历辐射诱导的结晶到非晶的转变，但具有高密度SF的纳米工程SiC在抗辐射性方面表现出超过一个数量级的增加。碰撞级联的分子动力学模拟表明，纳米层状SF导致间隙Si原子的迁移率增强。纳米工程SiC中显著的抗辐射性归因于纳米尺寸晶粒结构内的高密度SF，其显著增强点缺陷湮灭。
Radiation tolerance is determined by how effectively the microstructure can remove point defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of stacking faults (SFs) has significantly enhanced recombination of interstitials and vacancies, leading to self-healing of irradiation-induced defects. While single crystal SiC readily undergoes an irradiation-induced crystalline to amorphous transformation at room temperature, the nano-engineered SiC with a high-density of SFs exhibits more than an order of magnitude increase in radiation resistance. Molecular dynamics simulations of collision cascades show that the nano-layered SFs lead to enhanced mobility of interstitial Si atoms. The remarkable radiation resistance in the nano-engineered SiC is attributed to the high-density of SFs within nano-sized grain structures that significantly enhance point defect annihilation.