Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems
Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems
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DOI：
10.1116/1.1415508
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发表时间：
2001-12
影响因子：
1.4
通讯作者：
A. Stonas;N. MacDonald;K. Turner;S. Denbaars;E. Hu
中科院分区：
文献类型：
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作者：
A. Stonas;N. MacDonald;K. Turner;S. Denbaars;E. Hu
作者开发了一种湿法，带隙选择性，光电化学蚀刻工艺能够生产悬臂梁微机电系统的InGaN/GaN异质结构。成功地驱动了制造的悬臂梁，并测量了共振谱。发现GaN膜中的生长应变梯度在移除时松弛，导致悬臂梁向上弯曲。这种曲率被证明是可逆的应变InGaN层上的悬臂梁的顶面上的集成。所有的光电化学湿蚀刻进行使用台式灯和过滤器的安排，采用GaN和InGaN膜作为过滤器。
The authors have developed a wet, band-gap-selective, photoelectrochemical etching process capable of producing cantilever microelectromechanical systems from InGaN/GaN heterostructures. Fabricated cantilevers were successfully actuated, and resonance spectra were measured. The as-grown strain gradient in the GaN film was found to relax upon removal, resulting in upward curvature of the cantilevers. This curvature was shown to be reversible with the integration of strained InGaN layers on the top surface of the cantilever. All photoelectrochemical wet etching was conducted using a benchtop lamp-and-filter arrangement, employing GaN and InGaN films as filters.