Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films
Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films
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DOI：
10.1088/0957-4484/24/2/025601
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发表时间：
2013-01-18
期刊：
影响因子：
3.5
通讯作者：
Ambacher, O.
中科院分区：
文献类型：
--
作者：
Hees, J.;Heidrich, N.;Ambacher, O.
基于压电氮化铝（AlN）和金刚石薄膜的单晶异质结构在微纳机电系统中的应用是非常理想的。在本文中，我们提出了一种新的方法，将薄的导电掺硼和绝缘纳米晶金刚石（NCD）与溅射AlN薄膜结合在一起，而不需要在AlN和NCD之间添加任何缓冲层或抛光步骤。不同处理的纳米金刚石（ND）颗粒在水胶体中的zeta电位被调整为AlN在水中的zeta电位。因此，金刚石在AlN上初始生长的成核密度可以从非常低的（108 cm 2）（在氢处理ND种子颗粒的情况下）到非常高的1011 cm 2（氧化ND颗粒）变化。我们的方法产生高成核密度，允许在AlN上生长厚度低至40纳米的非常薄的NCD膜，用于微机电光束谐振器等应用。由于掺硼非镉薄膜的掺入，制备的压电驱动微谐振器表现出增强的机械性能。高度掺硼的NCD薄膜取代了金属顶电极，杨氏模量超过1000 GPa。
Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (108 cm 2), in the case of hydrogen-treated ND seeding particles, to very high values of 1011 cm 2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.