Specific heat of neutron-compensated heavily doped Si:P near the metal-insulator transition
Specific heat of neutron-compensated heavily doped Si:P near the metal-insulator transition
复制标题
金属-绝缘体转变附近的中子补偿重掺杂 Si:P 的比热
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
H. Löhneysen
中科院分区：
文献类型：
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作者：
M. Straub;K. Kirch;H. Löhneysen
中子辐照重掺杂Si：P（3.3·1018 cm−3 <$Nd <$7.3·1018 cm−3）的比热在0.07 ~ 3 K和0 ~ 6 T磁场下测量。通过等时退火系统地改变补偿比。通过霍尔系数和电阻率的温度依赖性测量进行表征。比热在P杂质带开始被占据的载流子浓度处显示出线性系数γ的最小值。从肖特基异常推断的本地化的时刻的浓度依赖性可以解释在本地化的磁矩所产生的缺陷结构引入的照射和从P-衍生的电子。如在未补偿的Si：P中，局部矩在过渡的金属侧上存活。
The specific heat of neutron-irradiated heavily doped Si:P (3.3·1018 cm−3≦Nd≦7.3·1018 cm−3) was measured between 0.07 and 3K and in magnetic fields between 0 and 6T. The compensation ratio was varied systematically by isochronal annealing. Characterization was done by temperature dependent measurements of Hall coefficient and electrical resistivity. The specific heat displays a minimum of the linear coefficient γ at the carrier concentration where the P impurity band is starting to be occupied. The concentration dependence of localized moments inferred from Schottky anomalies can be interpreted in terms of localized magnetic moments arising from the defect structure introduced by the irradiation and from P-derived electrons. As in uncompensated Si:P, local moments survive on the metallic side of the transition.