CYCLOTRON RESONANCE OF CONDUCTION ELECTRONS IN GAAS AT VERY HIGH MAGNETIC FIELDS
CYCLOTRON RESONANCE OF CONDUCTION ELECTRONS IN GAAS AT VERY HIGH MAGNETIC FIELDS
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极高磁场下 GAAS 中传导电子的回旋共振
DOI：
10.1103/physrevb.55.13598
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发表时间：
1997
影响因子：
3.7
通讯作者：
W. Zawadzki
中科院分区：
文献类型：
--
作者：
N. Miura;H. Nojiri;P. Pfeffer;W. Zawadzki
测量了GaAs中传导电子在电磁压缩产生的高达500 T的磁场中的回旋共振，光子能量为224 meV。在190 T左右的磁场下，可以分辨出回旋共振和相应的施主态之间的跃迁（磁施主跃迁）。自由电子回旋共振被成功地描述了五能级的能带结构的P p模型，这证实了该模型的有效性高达370 meV以上的带边。证明了自旋g值随磁场的变化而过零并改变符号。理论中考虑了共振极化子和非共振极化子，发现Fröhlich极化子耦合常数α= 0.085与实验数据拟合最好。对实验结果进行了分析，并采用有效的二能级P_（？）p模型进行了解释。
Cyclotron resonance of conduction electrons in GaAs was measured at a photon energy of 224 meV in magnetic fields up to 500 T produced by an electromagnetic flux compression. Cyclotron resonance and the corresponding transitions between donor states (magnetodonor transitions) were resolved at fields of about 190 T. The free-electron cyclotron resonance was successfully described by the five-level P⋅ p model of band structure, which confirms the validity of the model up to 370 meV above the band edge. It was demonstrated that the spin g value goes through zero and changes sign as a function of magnetic field. Resonant and nonresonant polarons were included in the theory and it was found that the Fröhlich polaron coupling constant α= 0.085 gives the best fit to the data. The experimental results of the magnetodonor transitions were analyzed and well accounted for by an effective two-level P⋅ p model.