Variation of band gap energy and photoluminescence characteristics with Te composition of ZnS1−xTex epilayers grown by hot-wall epitaxy
Variation of band gap energy and photoluminescence characteristics with Te composition of ZnS1−xTex epilayers grown by hot-wall epitaxy
复制标题
热壁外延生长的 ZnS1−xTex 外延层带隙能量和光致发光特性随 Te 成分的变化
DOI：
10.1016/s0169-4332(01)00550-5
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发表时间：
2001
影响因子：
6.7
通讯作者：
P. Yu
中科院分区：
文献类型：
--
作者：
Y. Yu;Sungun Nam;O. Byungsung;K. Lee;Y. Choi;Jongwon Lee;P. Yu
ZnS1−xTexternary alloy epilayers were grown on GaAs (100) substrates by hot-wall epitaxy (HWE), and the dependence of their band gap energy and photoluminescence (PL) characteristics on the Te composition x was investigated. The spectrophotometer measurement results demonstrated that the room temperature band gap energy varied with the Te composition x. The band gap energy showed the strong bowing effect given by Eg(x)=3.73−5.27x+3.80x2. The PL peaks of ZnS1−xTexepilayers shifted to the lower energy with increasing Te composition x. For x>0.69, the PL peak energy was very close to the band gap energy. Bowing parameter, 3.80, was closer to the value of Bernard et al., 3.83, and was a little larger than the previous other results. Strong emission ranging from blue to yellow was observed at room temperature. Also, the relations between Ten(n=1,2,3) atoms of the ZnS1−xTexepilayers and the exciton emission at room temperature were investigated.
