In situ transport measurements of plasma-oxidized MgO magnetic tunnel junctions during the annealing process
In situ transport measurements of plasma-oxidized MgO magnetic tunnel junctions during the annealing process
复制标题
退火过程中等离子体氧化 MgO 磁性隧道结的原位传输测量
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
B. Hickey
中科院分区：
文献类型：
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作者：
G. Anderson;A. Hindmarch;C. Marrows;B. Hickey
磁性隧道结的沉积后退火已经成为结制造中的标准实践，以改善势垒特性。我们已经进行了隧道测量，在高温下退火过程中等离子体氧化，氧化镁势垒，磁性隧道结。解释的哈特曼模型，占一个不对称的障碍配置文件的数据。结果不能仅仅用费米分布的温度拖尾来解释，因此在退火期间电极/势垒/电极结构已经改变。虽然在一个界面处的势垒高度提高，但另一个界面处的势垒高度降低。我们的实验使我们相信，这是由于Mn扩散到势垒/钉扎电极界面。我们表明，通过运输和隧道磁阻测量，它是可能的物理过程，如材料迁移过程中的退火监测。
The postdeposition annealing of magnetic tunnel junctions has become standard practice in junction fabrication to improve barrier properties. We have performed tunneling measurements at elevated temperatures during the annealing process on plasma-oxidized, MgO barrier, magnetic tunnel junctions. The data were interpreted in terms of the Hartman model which accounts for an asymmetric barrier profile. The results could not be interpreted solely by the temperature smearing of the Fermi distribution and so the electrode/barrier/electrode structure had been altered during the annealing. While the barrier height at one interface improved, the other was degraded. Our experiments lead us to believe that this is due to the diffusion of Mn to the barrier/pinned electrode interface. We show that through transport and tunneling magnetoresistance measurements it is possible to monitor physical processes such as material migration during the annealing process.