Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode
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DOI：
10.7567/apex.10.051002
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发表时间：
2017-04
影响因子：
2.3
通讯作者：
T. Maeda;M. Okada;M. Ueno;Yoshiyuki Yamamoto;T. Kimoto;M. Horita;J. Suda
中科院分区：
文献类型：
--
作者：
T. Maeda;M. Okada;M. Ueno;Yoshiyuki Yamamoto;T. Kimoto;M. Horita;J. Suda
在223-573K温度范围内，通过电容-电压、电流-电压和内光电子能谱测量，研究了在GaN同质外延层上制作的Ni/n-GaN肖特基势垒二极管势垒高度与温度的关系。温度系数为−(1.7~2.3)×10−4 eV/K，约为文献报道的带隙温度系数的一半。这表明，势垒高度的降低可能主要反映了GaN中禁带的缩小(导带边缘的降低)随温度的升高。
The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode fabricated on a GaN homoepitaxial layer was investigated by capacitance–voltage, current–voltage, and internal photoemission measurements in the range of 223–573 K. The barrier height obtained by these methods linearly decreased with increasing temperature. The temperature coefficient was −(1.7–2.3) × 10−4 eV/K, which is about half of the temperature coefficient of the band gap reported previously. This indicates that the decrease in the barrier height may mainly reflect the shrinkage of the band gap (lowering of the conduction band edge) in GaN with increasing temperature.