The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth
The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth
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DOI：
10.1002/pssc.200303511
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发表时间：
2003-12
期刊：
影响因子：
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通讯作者：
T. Narita;T. Hikosaka;Y. Honda;M. Yamaguchi;N. Sawaki
中科院分区：
文献类型：
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作者：
T. Narita;T. Hikosaka;Y. Honda;M. Yamaguchi;N. Sawaki
用选区金属有机气相外延方法在(111)Si衬底上生长了梯形AlGaN/GaN异质结。在梯形样品上，我们发现GaN和AlGaN生长中的脊状生长方式不同。利用扫描电子显微镜(SEM)、反射电子显微镜(REM)和阴极发光光谱(CL)对薄膜的厚度和成分进行了分析，确定了Ga化学物种在(0001)AlGaN表面的扩散长度。
The growth of a trapezoidal AlGaN/GaN heterostructure was attempted on a (111) Si substrate by selective area metal organic vapour phase epitaxy. On the trapezoidal sample we found that the manner of ridge growth is different in GaN growth from that in AlGaN growth. Analysing the thickness and composition with scanning electron microscopy (SEM), reflection electron microscopy (REM) and cathode luminescence (CL) spectroscopy, the diffusion length of Ga chemical species on the (0001) AlGaN surface was determined.