Transverse Spin Seebeck Effect versus Anomalous and Planar Nernst Effects in Permalloy Thin Films
Transverse Spin Seebeck Effect versus Anomalous and Planar Nernst Effects in Permalloy Thin Films
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DOI：
10.1103/physrevlett.111.187201
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发表时间：
2013-10-28
影响因子：
8.6
通讯作者：
Back, C. H.
中科院分区：
文献类型：
--
作者：
Schmid, M.;Srichandan, S.;Back, C. H.
研究了在 MgO 和 GaAs 基板上生长的坡莫合金薄膜的横向磁热电效应，并与在悬浮 SiNx 膜上生长的薄膜进行了比较。测量沿着坡莫合金薄膜顶部图案化的铂条的横向电压与外部磁场的关系，作为角度和温度梯度的函数。在确定了平面和反常能斯特效应的贡献后，我们发现了横向自旋塞贝克效应的上限，该上限比之前报道的要小几个数量级。
Transverse magnetothermoelectric effects are studied in Permalloy thin films grown on MgO and GaAs substrates and compared to those grown on suspended SiNx membranes. The transverse voltage along platinum strips patterned on top of the Permalloy films is measured versus the external magnetic field as a function of the angle and temperature gradients. After the identification of the contribution of the planar and anomalous Nernst effects, we find an upper limit for the transverse spin Seebeck effect, which is several orders of magnitude smaller than previously reported.