In situ stress measurements during copper electrodeposition on (111)-textured Au
In situ stress measurements during copper electrodeposition on (111)-textured Au
复制标题
DOI：
10.1149/1.1854093
复制
发表时间：
2005-01-01
影响因子：
3.9
通讯作者：
Stafford, GR
中科院分区：
文献类型：
--
作者：
Kongstein, OE;Bertocci, U;Stafford, GR
在原位应力测量铜电沉积到（III）-织构Au从酸性硫酸盐电解液使用晶片曲率法。在Cu欠电位沉积区域中，中间（根3 X根3）R30度Cu-硫酸盐蜂窝结构产生表面应力，当与正电位下的硫酸盐吸附电极或更负电位下的完整（1 X 1）Cu单层相比时，该表面应力是拉伸的。这种行为与文献中出现的表面诱导电荷再分布模型是一致的。在Cu的体沉积过程中，在第一个20 nm的生长过程中，拉伸应力迅速增加，我们将其归因于晶核聚结和晶界形成。拉伸应力的大小以及出现最大应力时的膜厚都取决于电极电位，因为电极电位对成核密度有影响。当薄膜是连续的，总应力是叠加的聚结引起的拉伸应力和压缩应力，我们归因于纳入的移动的吸附原子的表面上的晶界。拉伸应力分量占主导地位的薄膜沉积在高过电位，而厚膜沉积在低过电位有一个净压应力。当沉积被中断时，应力的拉伸和压缩分量都有所松弛，但当沉积重新开始时，它们很快重新建立。我们在这里描述的生长应力的发展是非常相似的，这已被报道为铜沉积从气相。(c)2005年电化学学会。All rights reserved.
In situ stress measurements were made during copper electrodeposition onto (III)-textured Au from acidic sulfate electrolyte using the wafer curvature method. In the Cu underpotential deposition region, the intermediate (root 3 x root 3)R30 degrees Cu-sulfate honeycomb structure creates a surface stress that is tensile when compared to that of the sulfate-adsorbed electrode at positive potentials or the complete (1 x 1) Cu monolayer at more negative potentials. This behavior is consistent with surface-induced charge redistribution models that appear in the literature. During the bulk deposition of Cu, there is a rapid increase in tensile stress during the first 20 nm of growth that we attribute to nuclei coalescence and grain boundary formation. The magnitude of the tensile stress as well as the film thickness at which the maximum stress occurs are both dependent upon the electrode potential due to its influence on the nucleation density. When the films are continuous, the total stress is the superposition of the coalescence-induced tensile stress and a compressive stress which we attribute to the incorporation of mobile adatoms on the surface into the grain boundaries. The tensile stress component dominates thin films deposited at high overpotential, whereas thick films deposited at low overpotential have a net compressive stress. When deposition is interrupted both tensile and compressive components of the stress relax somewhat but are quickly reestablished when deposition is resumed. The development of the growth stress that we describe here is very similar to that which has been reported for Cu deposition from the vapor phase. (c) 2005 The Electrochemical Society. All rights reserved.