CMOS-MEMS 3-bit Digital Capacitors With Tuning Ratios Greater Than 60:1
CMOS-MEMS 3-bit Digital Capacitors With Tuning Ratios Greater Than 60:1
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调谐比大于 60:1 的 CMOS-MEMS 3 位数字电容器
DOI：
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发表时间：
2011
影响因子：
4.3
通讯作者：
T. Mukherjee
中科院分区：
文献类型：
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作者：
J. Reinke;G. Fedder;T. Mukherjee
具有大于60:1调谐比的3位微机电系统数字电容器采用后CMOS制造工艺与CMOS单片集成。数字电容器由许多并联的开关电容器组成，这些开关电容器使用垂直（面外）电热驱动和横向（面内）静电驱动的组合来切换其电容值。测量结果表明，在1 GHz和10 GHz以上的电自谐振频率下，质量因子大于150。电容器可以在不到1ms的时间内切换，电热驱动为4v，静电驱动为20v。提出了重复驱动对数字电容器可靠性的影响。
3-bit microelectromechanical systems digital capacitors with greater than 60:1 tuning ratios are monolithically integrated with CMOS using a post-CMOS fabrication process. The digital capacitors are composed of many switched capacitors in parallel, which use a combination of vertical (out-of-plane) electrothermal actuation and lateral (in-plane) electrostatic actuation to toggle their capacitance value. Measured results demonstrate quality factors greater than 150 at 1 GHz and electrical self-resonant frequencies beyond 10 GHz. The capacitors can be switched in less than 1 ms with 4 V for electrothermal actuation and 20 V for electrostatic actuation. The effects of repeated actuation are presented to assess the reliability of the digital capacitors.