Photoluminescence and cathodoluminescence of YVO4:Sm3+ thin films prepared by pulsed laser deposition method with various substrates
Photoluminescence and cathodoluminescence of YVO4:Sm3+ thin films prepared by pulsed laser deposition method with various substrates
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DOI：
10.1007/s00339-008-4522-2
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
H. Yang;Jong Won Chung;B. Moon;B. Choi;J. Jeong;S. Yi;Jung Hwan Kim
中科院分区：
文献类型：
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作者：
H. Yang;Jong Won Chung;B. Moon;B. Choi;J. Jeong;S. Yi;Jung Hwan Kim
采用脉冲激光沉积法在不同的衬底上沉积了YVO4:Sm3+薄膜。薄膜被沉积在熔融二氧化硅、MgO（100）、Al2O3（0001）和Si（100）衬底上。利用x射线衍射仪（XRD）和扫描电镜（SEM）对膜的结晶度和表面形貌进行了研究。在不同的衬底上生长的薄膜具有不同的结晶度和形态。熔融石英、MgO（100）、Al2O3（0001）和Si（100）的（200）峰半峰宽分别为0.20、0.14、0.12和0.18°。根据Scherrer公式，在熔融二氧化硅、MgO（100）、Al2O3（0001）和Si（100）上生长的荧光粉的晶粒尺寸分别为7.25、10.08、11.88和8.14 nm，而在Al2O3（0001）上生长的荧光粉的晶粒尺寸最大为11.88 nm。在室温下用发光光谱仪测量了光致发光和阴极发光光谱，发射辐射以4g5 /2→6H7/2跃迁辐射的602 nm处的红色发射峰为主。在Al2O3（0001）衬底上生长的YVO4:Sm3+薄膜的发光强度最大，其亮度分别是在MgO（100）、熔融二氧化硅和Si（100）衬底上生长的YVO4:Sm3+薄膜的1.3倍、2.9倍和5.0倍。薄膜荧光粉的结晶度、表面形貌和发光光谱高度依赖于衬底。
YVO4:Sm3+films have been deposited on different substrates using pulsed laser deposition method. The films were deposited on fused silica, MgO(100), Al2O3(0001), and Si(100) substrates. The crystallinity and surface morphology of the films were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The films grown on the different substrates have different crystallinity and morphology. The full-width at half-maximum (FWHM) of (200) peak are 0.20, 0.14, 0.12, and 0.18° for fused silica, MgO(100), Al2O3(0001), and Si(100), respectively. The crystallite size, estimated by using Scherrer’s formula, of phosphors grown on fused silica, MgO(100), Al2O3(0001), and Si(100) was about 7.25, 10.08, 11.88, and 8.14 nm, respectively and it has a maximum at 11.88 nm for the thin film grown on Al2O3(0001). The photoluminescence and the cathodoluminescence spectra were measured at room temperature using a luminescence spectrometer and the emitted radiation was dominated by the red emission peak at 602 nm radiated from the transition of4G5/2→6H7/2. YVO4:Sm3+films have maximum PL intensity for the films grown on the Al2O3(0001) substrate and the brightness of the films were higher 1.3, 2.9, and 5.0 times in comparison with that of the YVO4:Sm3+films grown on MgO(100), fused silica, and Si (100) substrates, respectively. The crystallinity, surface morphology and luminescence spectra of thin-film phosphors were highly dependent on substrates.