Thermally activated de‐excitation of the EL2 metastable state in GaAs
Thermally activated de‐excitation of the EL2 metastable state in GaAs
复制标题
DOI：
10.1002/crat.2170230324
复制
发表时间：
1988-03
影响因子：
1.5
通讯作者：
P. Trautman;M. Kamińska;J. Baranowski
中科院分区：
文献类型：
--
作者：
P. Trautman;M. Kamińska;J. Baranowski
测量了GaAs中主要本征缺陷EL 2的n型和未掺杂半绝缘GaAs的近红外吸收。当晶体冷却到氦温时，经1 μm光照射后，与EL 2有关的整个吸收带消失。测量了EL 2吸收的热激活恢复。去激发的速率可以用公式来描述：r = 1.7 · 1012 · exp（−0.36 eV/kT）+ 1.6 · 10−9 · n · exp（−0.085 eV/kT）s−1其中n [cm−3]是自由电子的浓度。
Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 μm light illumination when the crystal was cooled to helium temperatures. Measurements of the thermally activated recovery of EL2 absorption have been made. The rate of the de-excitation is well described by the formula: r = 1.7 · 1012 · exp (−0.36 eV/kT) + 1.6 · 10−9 · n · exp (−0.085 eV/kT) s−1 where n [cm−3] is the concentration of free electrons.