Ultrasonic study of tunnelling defects in amorphous Se, Ge and Se-Ge compounds
Ultrasonic study of tunnelling defects in amorphous Se, Ge and Se-Ge compounds
复制标题
非晶 Se、Ge 和 Se-Ge 化合物中隧道缺陷的超声研究
DOI：
--
复制
发表时间：
1985
期刊：
影响因子：
--
通讯作者：
G. Bellessa
中科院分区：
文献类型：
--
作者：
J. Duquesne;G. Bellessa
在100 MHz范围和0 ~ 1k ~ 10k范围内，测量了超声波在非晶Se、非晶Ge和非晶Se-Ge化合物中传播的速度和衰减。在两能级系统理论的框架下对结果进行了解释。特别地，我们清楚地揭示了四配位非晶网络中两能级系统的存在性。此外，我们报告了两级系统耦合参数的变化作为网络刚度的函数，并根据两级系统的密度和变形势来解释这些变化。
Abstract We have measured, in the 100 MHz range and between 0-1K and 10 K, the velocity and the attenuation of ultrasonic waves propagating in amorphous Se, amorphous Ge and amorphous Se-Ge compounds. The results are explained in the framework of the theory of two-level systems. In particular, the existence of a two- level system in a tetracoordinated amorphous network is clearly revealed. Moreover, we report variations of the coupling parameter of the two-level system as a function of the rigidity of the network and explain these in terms of the density and the deformation potential of the two-level systems.