Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(1 0 0) substrate
Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(1 0 0) substrate
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DOI：
10.1016/j.apsusc.2014.09.071
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发表时间：
2014-11
影响因子：
6.7
通讯作者：
S. S. Shenouda-S.;G. Langer;G. Katona;L. Daroczi;A. Csík;D. Beke
中科院分区：
文献类型：
--
作者：
S. S. Shenouda-S.;G. Langer;G. Katona;L. Daroczi;A. Csík;D. Beke
报道了一种在Si（100）衬底上低温（180-200 ℃）磁控沉积Ni 2Si薄膜获得薄（5-20 nm厚）NiSi层的工艺。其次是通过二次中性质谱，透射电子显微镜和电阻测量的时间演变的转变。结果表明，存在一定的温度-时间窗口和厚度-时间窗口内的NiSi的形成发生。NiSi相沿着Ni 2Si的晶界形成并通过这些界面的运动而生长，逐渐消耗Ni 2Si相。从该过程的第一阶段的深度分布，使用退火时间上的膜内的平均组合物的线性依赖性，晶界扩散引起的界面运动的速度也被估计。电阻的归一化值与新相的量成比例，表现出类似的时间演化，并产生类似的界面速度值。
We report a process to obtain thin (5–20 nm thick) NiSi layers on Si(1 0 0) substrate from magnetron deposited Ni2Si thin films at low temperatures (180–200 ̊C). The time evolution of transformation was followed by means of Secondary Neutral Mass Spectrometry, transmission electron microscopy and resistance measurements. It is shown that there exist certain temperature-time and thickness-time windows inside of which the formation of NiSi takes place. The NiSi phase, formed along the grain boundaries of Ni2Si and grew by the motion of these interfaces, gradually consumes the Ni2Si phase. From the depth profiles of the first stage of the process, using the linear dependence of the average composition inside the film on the annealing time, the velocity of the grain boundary diffusion induced interface motion was also estimated. The normalized value of the resistance, proportional to the amount of the new phase, showed similar time evolution and yielded similar value for the interface velocity.