A framework for generation and recombination in tunneling field-effect transistors
A framework for generation and recombination in tunneling field-effect transistors
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隧道场效应晶体管的生成和重组框架
DOI：
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发表时间：
2015
期刊：
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通讯作者：
D. Antoniadis
中科院分区：
文献类型：
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作者：
J. Teherani;W. Chern;S. Agarwal;J. Hoyt;D. Antoniadis
尽管近十年的积极研究隧道场效应晶体管（TFFET），很少有实验结果表明，亚阈值摆幅（SS）小于60 mV/十年室温极限。对于超过热极限的器件，仅在电流密度小于10 nA/μm时观察到陡峭的SS [1]-[5]。许多实验结果与理想化模拟形成鲜明对比，理想化模拟示出了由各种材料系统和几何形状制成的器件的陡峭SS、低截止电流和高导通电流（参见，例如，[6]中所示的实验和模拟TFET传输特性图）。这表明TFET模拟不足以对实验设备中存在的降低测量的电气特性的非理想效应进行建模。
Despite nearly a decade of active research on tunneling field-effect transistors (TFETs), few experimental results have shown a subthreshold swing (SS) less than the 60-mV/decade room-temperature limit. For those devices beating the thermal limit, steep SS has only been observed at current densities less than 10 nA/μm [1]-[5]. Many experimental results are in sharp contrast to idealized simulations that show steep SS, low off-current, and high on-current for devices made from a variety of material systems and geometries (see, e.g., the plots of experimental and simulated TFET transfer characteristics shown in [6]). This suggests that TFET simulations are inadequately modeling non-ideal effects present in experimental devices that degrade the measured electrical characteristics.