Optical lithography - present and future challenges

Optical lithography - present and future challenges
复制标题

DOI:
10.1016/j.crhy.2006.10.005
复制
发表时间:
2006-10-01
影响因子:
1.4
通讯作者:
Lin, Burn J.
Lin, Burn J.
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Lin, Burn J.

文献摘要

被引文献

相似文献

几十年来,光学光刻一直是工业的主力。它的波长已经达到193 nm,数值孔径(NA)为0.93,但在浸没式光刻首次亮相之前,它面临着进一步发展的困难。本文综述了干法和浸没式光刻系统的极限,以及达到这些极限所面临的当前和未来的挑战。讨论了浸没式光刻的缺陷、浸没式光刻的现状、偏振照明、高折射率材料、固体浸没掩模、双曝光和双图案化。(2006年)。2006年学术版DES科学。爱思唯尔·马森公司出版。版权所有。
Optical lithography has been an industrial workhorse for many decades. It has reached a wavelength of 193 nm, a Numerical Aperture (NA) of 0.93 but was facing difficulties to advance further until the debut of immersion lithography. This review deals with the limit of dry and immersion lithography systems, their present and future challenges to reach these very limits. A discussion of defects in immersion lithography, the status of immersion lithography, polarized illumination, high-index materials, solid-immersion mask, double exposure and double patterning is included. (2006). 2006 Academic des sciences. Published by Elsevier Masson SAS. All rights reserved.