Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
复制标题
表面处理 GaN 衬底上 Al2O3/GaN 垂直型 MOS 电容器的界面陷阱表征
DOI：
10.1016/j.jallcom.2018.07.150
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发表时间：
2018-10-30
影响因子：
6.2
通讯作者：
Sang, Liwen
中科院分区：
文献类型：
--
作者：
Ren, Bing;Sumiya, Masatomo;Sang, Liwen
本文报道了在不同表面处理的氮化镓衬底上均匀生长的Al2O3/GaN垂直型金属氧化物半导体（MOS）电容器的界面阱特性。分析了在MOS界面处和界面附近不同陷阱态的行为和性质，并对其电学和微观结构特征进行了分析。结果表明，仅酸洗不能有效抑制界面陷阱，而随后的（NH4）(2)S钝化可以显著降低界面状态密度，达到类似于10(11)cm(-2) eV（-1）的检测极限。同时，边界陷阱和靠近MOS界面的固定电荷也被抑制，导致电滞回和频散在电容电压测量中被忽略。(C) 2018 Elsevier B.V.版权所有
We report on the interface trap properties Al2O3/GaN vertical-type metal-oxide-semiconductor (MOS) capacitors homogeneously grown on GaN substrates with different surface treatments. The electrical and microstructure characteristics are analyzed with regard to the behaviors and natures of different trap states at and close to the MOS interface. It is shown that only acid cleaning could not effectively suppress the interface traps, while a following (NH4)(2)S passivation drastically reduce the interface state density to the detection limit of similar to 10(11) cm(-2) eV(-1). At the same time, border traps and fixed charges located close to the MOS interface are also suppressed, leading to a neglecting electrical hysteresis and frequency dispersion in the capacitance-voltage measurement. (C) 2018 Elsevier B.V. All rights reserved.