An all chemical solution deposition approach for the growth of highly textured CeO2 cap layers on La2Zr2O7-buffered long lengths of biaxially textured Ni–W substrates for YBCO-coated conductors
An all chemical solution deposition approach for the growth of highly textured CeO2 cap layers on La2Zr2O7-buffered long lengths of biaxially textured Ni–W substrates for YBCO-coated conductors
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DOI：
10.1088/0953-2048/18/10/024
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发表时间：
2005-10
影响因子：
3.6
通讯作者：
S. Engel;K. Knoth;R. Hühne;L. Schultz;B. Holzapfel
中科院分区：
文献类型：
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作者：
S. Engel;K. Knoth;R. Hühne;L. Schultz;B. Holzapfel
采用卷对卷浸涂工艺在5 m长的立方织构{100}（001）Ni带材上连续存款La 2 Zr 2 O 7（LZO）和CeO 2外延层。最近的结果La 2 Zr 2 O 7和CeO 2缓冲层沉积在长长度的Ni基板上实现YBa 2Cu 3 O 7 −x（YBCO）涂层导体。主要的成就是一个新的所有化学溶液沉积（CSD）过程的发展，导致高度织构化的缓冲层在适度的退火温度下形成。在还原性气氛（Ar-5at.%-5at. %）中，对于低至900 °C的退火温度，获得了可再现的高度织构化、致密且无裂纹的LZO缓冲层和CeO 2盖层。H2）。LZO缓冲层的厚度被确定为每单个涂层（200 ± 10）nm;制备的氧化铈层显示出60 nm ± 10 nm的厚度。采用脉冲激光沉积（PLD）技术在这些衬底上生长YBCO薄膜。在PLD-YBCO/CSD-CeO 2/CSD-LZO/Ni-5at.%的催化剂上，T_c 0 = 90.5K，Δ T_c = 1.4K W，展示了CSD处理后的这种新的缓冲层结构的突出特点。大的层厚度结合低退火温度是这种新工艺的主要优点，用于在Ni-RABiTS（滚动辅助双轴织构衬底）上低成本的缓冲层沉积。
A reel-to-reel, dip coating process has been developed to continuously deposit epitaxial La2Zr2O7 (LZO) and CeO2 on 5 m long cube-textured {100} (001)Ni tapes. Recent results for La2Zr2O7 and CeO2 buffer layers deposited on long lengths of Ni substrate for the realization of YBa2Cu3O7−x (YBCO)-coated conductors are presented. The major achievement is the development of a new all chemical solution deposition (CSD) process leading to the formation of highly textured buffer layers at moderate annealing temperatures. Reproducible highly textured, dense and crack-free LZO buffer layers and CeO2 cap layers were obtained for annealing temperatures as low as 900 °C in a reducing atmosphere (Ar–5 at.%-H2). The thickness of the LZO buffer layers was determined to be (200 ± 10) nm per single coating; prepared cerium oxide layers showed a thickness of 60 nm ± 10 nm. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A Tc 0 of T = 90.5 K and ΔTc = 1.4 K was obtained on PLD-YBCO/CSD-CeO2 /CSD-LZO/Ni–5 at.% W, which shows the outstanding features of this new buffer layer architecture processed by CSD. The large layer thickness combined with low annealing temperatures is the main advantage of this new process for low-cost buffer layer deposition on Ni-RABiTS (rolling-assisted biaxially textured substrates).