Performance of FBK low-afterpulse NUV silicon photomultipliers for PET application
Performance of FBK low-afterpulse NUV silicon photomultipliers for PET application
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用于 PET 应用的 FBK 低后脉冲 NUV 硅光电倍增管的性能
DOI：
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发表时间：
2016
期刊：
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通讯作者：
N. Zorzi
中科院分区：
文献类型：
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作者：
A. Ferri;F. Acerbi;A. Gola;G. Paternoster;C. Piemonte;N. Zorzi
提高符合分辨时间（CRT）是下一代正电子发射断层成像（PET）扫描仪的关键因素之一。硅光电倍增管（sipv）由于其结构紧凑、坚固耐用、对磁场不敏感等优点，是替代光电倍增管的有力候选材料。为了获得最佳的阴极射线管，SiPM应该具有高的PDE，可以通过增加偏置电压来获得。我们最近改进了NUV SiPM技术，增加了一种新的衬底类型，可以显著降低后脉冲概率（Low-AP）。这样可以延长最大偏置电压，从而获得更高的PDE。此外，我们实施了一个低电场版本（Low-F），以减少暗计数率的场增强热生成组件。在这项工作中，我们展示了PET应用的能量和时间分辨率的结果，使用LYSO闪烁体晶体，并结合3 × 3 mm2的NUV SiPMs三种类型：非Low-AP， Low-AP和Low-AP + Low-F。所有的装置都达到了非常相似的能量分辨率，约为9.5%，接近LYSO的固有极限。在时序分辨率方面，我们发现Low-AP衬底实现了约30 ps的CRT改进，与Low-F证实。使用4 × 4 mm2 Low-AP SiPMs耦合到3 × 3 × 5 mm3和3.8 × 3.8 × 22 mm3 LYSO晶体，我们分别获得了130和200 ps FWHM的crt。
The improvement of the coincidence resolving time (CRT) is one of the key factors for the next generation of positron emission tomography (PET) scanners. Silicon photomultipliers (SiPMs) are strong candidates to substitute photo multipliers tubes because of their compactness, ruggedness and insensitivity to magnetic fields. In order to achieve the best CRT, the SiPM should have high PDE which can be obtained increasing the bias voltage. We recently improved the NUV SiPM technology, with the addition of a new substrate type that provides significantly lower afterpulsing probability (Low-AP). This enables to extend the maximum bias voltage and thus obtain higher PDE. Additionally, we implemented a lower electric field version (Low-F) to reduce the field-enhanced thermal generation components of the dark count rate. In this work we present results of energy and timing resolution for PET application, using LYSO scintillator crystals, and coupled with 3 × 3 mm2 NUV SiPMs of three types: non-Low-AP, Low-AP and Low-AP + Low-F. All the devices reach very similar energy resolutions, around 9.5 %, and close to the intrinsic limit of the LYSO. Concerning the timing resolution, we found that the Low-AP substrate achieves an improvement of the CRT of ≈ 30 ps, confirmed with the Low-F. Using 4 × 4 mm2 Low-AP SiPMs coupled to 3 × 3 × 5 mm3 and 3.8 × 3.8 × 22 mm3 LYSO crystals we obtained CRTs of 130 and 200 ps FWHM, respectively.