High Resolution Thin Film Magnetic Sensor Using Magneto-Impedance Effect
High Resolution Thin Film Magnetic Sensor Using Magneto-Impedance Effect
复制标题
利用磁阻抗效应的高分辨率薄膜磁传感器
DOI：
10.1541/ieejfms1990.118.6_689
复制
发表时间：
1998
影响因子：
--
通讯作者：
Y. Nonomura
中科院分区：
文献类型：
--
作者：
Yamadera Hideya;Y. Nishibe;T. Morikawa;Y. Nonomura
采用射频磁控溅射法制备了CoSiB/Cu/CoSiB薄膜元件，发现了磁阻抗效应。在这些元件中，当外部磁场施加到纵向方向时，实现了非常大的阻抗变化率。这些比值远高于其他具有MI效应的元素。因此，这对于高分辨率方向感测是有用的。
A Magneto-Impedance (MI) effect was found in CoSiB/Cu/CoSiB thin film elements fabricated by RF magnetron sputtering. In these elements very large impedance change ratios were achieved when an external magnetic field was applied to the longitudinal direction. These ratios were much higher than those of any other element with MI effect. Therefore, it is useful for the high resolution direction sensing .