Electron transport tuning of graphene by helium ion irradiation
Electron transport tuning of graphene by helium ion irradiation
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DOI：
10.1088/2632-959x/ac73ad
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发表时间：
2022-05
期刊：
影响因子：
3
通讯作者：
S. Nakaharai;T. Iwasaki;Y. Morita;S. Moriyama;Shinichi Ogawa
中科院分区：
文献类型：
--
作者：
S. Nakaharai;T. Iwasaki;Y. Morita;S. Moriyama;Shinichi Ogawa
本文综述了单层石墨烯中的电荷载流子输运现象，其中使用氦离子显微镜通过氦离子束照射产生晶体缺陷。晶体缺陷作为电子散射体，并且电导率随着离子剂量的增加而急剧衰减。此外，在离子束扫描石墨烯表面的实时电导率监测证明。在磁场下的低温测量中，有缺陷的石墨烯表现出负磁阻，这表明在这个二维电子系统中发生了强烈的局域化，即使在室温下也能存活。局域态有助于在状态密度最小的狄拉克点周围诱导出输运能隙，并且通过调节载流子密度来实现载流子输运的场效应控制。展示了具有缺陷石墨烯通道的场效应晶体管的制造和操作。
This article reviews charge carrier transport phenomena in single-layer graphene, in which crystalline defects are generated by helium-ion-beam irradiation using a helium-ion microscope. Crystalline defects work as electron scatterers, and the conductivity drastically decays as ion dose increases. Moreover, real-time conductivity monitoring during ion beam scans over the graphene surface is demonstrated. In cryogenic measurements under magnetic fields, defective graphene exhibits negative magnetoresistance, suggesting that strong localization occurred in this two-dimensional electron system, which survived even at room temperature. The localized state contributes to inducing a transport gap around the Dirac point, where the density of states is at its minimum, and it enables field-effect control of the carrier transport by tuning the carrier density. The fabrication and operation of field-effect transistors with defective graphene channels are demonstrated.