Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain
Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain
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DOI：
10.1063/1.1607521
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发表时间：
2003-10-01
影响因子：
3.2
通讯作者：
Weber, ER
中科院分区：
文献类型：
--
作者：
Shapiro, NA;Feick, H;Weber, ER
InGaN 量子阱的连续波和时间分辨光致发光作为施加的双轴应变的函数进行测量，这提供了改变这些结构中的内置偏振场的独特方法。在分析载流子分离模型中定量分析发光峰能量移动的方向和幅度。发现目前使用的InGaN压电系数与我们的实验结果并不完全一致。相反，对我们数据的一致解释要求 InN 的 e(13) 和 e(33) 压电系数比普遍接受的值大 15%。我们的分析允许为每个研究的量子阱样本分配有效的载流子分离参数，该参数量化了发光峰值能量随偏振场变化的变化。发现窄量子阱的有效载流子分离为零（
Continuous-wave and time-resolved photoluminescence of InGaN quantum wells are measured as a function of applied biaxial strain, which provides a unique means of altering the built-in polarization field in these structures. The direction and magnitude of the shift of the luminescence-peak energy are quantitatively analyzed within an analytical carrier separation model. It is found that the presently used piezoelectric coefficients of InGaN are not entirely consistent with our experimental results. Instead, consistent interpretation of our data requires the e(13) and e(33) piezoelectric coefficients of InN to be similar to15% larger than the commonly accepted values. Our analysis allows the assignment of an effective carrier-separation parameter to each investigated quantum-well sample, which quantifies the shift of the luminescence peak energy with the change in the polarization field. The effective carrier separation is found to be zero for narrow quantum wells (