Nonmetallic transport property of the Si ( 111 ) 7 × 7 surface
Nonmetallic transport property of the Si ( 111 ) 7 × 7 surface
复制标题
Si(111)7×7表面的非金属输运特性
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Y. Hasegawa
中科院分区：
文献类型：
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作者：
Takehiro Tanikawa;K. Yoo;I. Matsuda;S. Hasegawa;Y. Hasegawa
利用超高真空中的微型四点探针，研究了与空间电荷区域和表面态带相关的 $mathrm{Si}(111)7ifmmode imeselse exttimesfi{}7$ 重建的电表面输运特性作为温度 (80--400 K) 的函数。表面附近的电导随着温度的升高而增加，这与所研究的温度范围内的块体硅晶体的电导相反。这可以通过移动载流子在 $mathrm{Si}(111)7ifmmode imeselse exttimesfi{}7$ 表面下方的施主杂质空位之间跳跃的跳跃传导来解释，表面态贡献很小。还根据吸附原子悬挂键的局部性质提出了通过表面态的热激活跳跃传导。
The electrical surface transport property of the $mathrm{Si}(111)7ifmmode imeselse exttimesfi{}7$ reconstruction associated with the space-charge region and with the surface-state band was studied as a function of temperature (80--400 K) with the micro-four-point probes in ultrahigh vacuum. Electrical conductance near the surface increases with increasing temperature, which is opposite to that of the bulk Si crystal in the temperature range investigated. This can be explained by the hopping conduction of mobile carriers jumping between empty sites of donor-impurities underneath the $mathrm{Si}(111)7ifmmode imeselse exttimesfi{}7$ surface with a small surface-state contribution. The thermally activated hopping conduction through the surface-states is also proposed in terms of localized nature of the adatom dangling bonds.