Dielectric properties of SrTiO3 thin films used in high Tc superconducting field‐effect devices
Dielectric properties of SrTiO3 thin films used in high Tc superconducting field‐effect devices
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DOI：
10.1063/1.107204
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发表时间：
1992-04
影响因子：
4
通讯作者：
A. Walkenhorst;C. Doughty;X. Xi;S. Mao;Qi Li;T. Venkatesan;R. Ramesh
中科院分区：
文献类型：
--
作者：
A. Walkenhorst;C. Doughty;X. Xi;S. Mao;Qi Li;T. Venkatesan;R. Ramesh
研究了在高温超导场效应器件中用作介电层的 SrTiO3 外延薄膜的介电常数。发现这些薄膜对温度和施加电场的依赖性比块体材料弱得多。包含 SrTiO3 介电层的栅极结构的击穿特性受到用作栅电极的金属的强烈影响。
The dielectric constant ■ of thin epitaxial SrTiO3 films used as dielectric layers in high Tc superconducting field‐effect devices has been studied. ■ in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO3 dielectric layers are strongly influenced by the metal used as the gate electrode.