p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
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DOI：
10.1063/1.2217165
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发表时间：
2006-06
影响因子：
4
通讯作者：
Yujia Zeng;Z. Ye;Wendao Xu;Jinggang Lu;Haiping He;Luming Zhu;Binghui Zhao;Y. Che;Shengbai Zhang-Shen
中科院分区：
文献类型：
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作者：
Yujia Zeng;Z. Ye;Wendao Xu;Jinggang Lu;Haiping He;Luming Zhu;Binghui Zhao;Y. Che;Shengbai Zhang-Shen
我们报告了等离子体辅助金属有机化学气相沉积本征 p 型 ZnO 薄膜。最佳结果给出电阻率为12.7Ωcm，霍尔迁移率为2.6cm2∕Vs，空穴浓度为1.88×1017cm−3。与n型层相比，本征p型ZnO中的氧浓度增加。两个受主态的能级位于价带最大值以上 160 和 270meV，可通过温度依赖性光致发光来识别。内在p型行为的起源归因于锌空位和一些复杂受体中心的形成。
We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7Ωcm, a Hall mobility of 2.6cm2∕Vs, and a hole concentration of 1.88×1017cm−3. The oxygen concentration is increased in the intrinsic p-type ZnO, compared with the n-type layer. Two acceptor states, with the energy levels located at 160 and 270meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p-type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center.