Improvement of thermoelectric properties of Cu3SbSe4 compound by In doping
Improvement of thermoelectric properties of Cu3SbSe4 compound by In doping
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DOI：
10.1016/j.matdes.2016.03.001
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发表时间：
2016-05
影响因子：
8.4
通讯作者：
Dan Zhang;Junyou Yang;Q. Jiang;L. Fu;Ye Xiao;Yubo Luo;Zhiwei Zhou
中科院分区：
文献类型：
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作者：
Dan Zhang;Junyou Yang;Q. Jiang;L. Fu;Ye Xiao;Yubo Luo;Zhiwei Zhou
采用熔融-粉碎-热压工艺制备了In掺杂的Cu_3Sb_（1-x）In_xSe_4（x= 0，0.002，0.003和0.004）化合物。探讨了In掺杂对其热电性能的影响，发现In占据了Sb的位置，起到了受体掺杂剂的作用。随着In掺杂量的增加，电阻率和Seebeck系数减小，高温下的功率因数比未掺杂的Cu 3SbSe 4有明显提高。同时，由于In掺杂引入的点缺陷引起的声子散射，热导率也降低。因此，对于掺杂样品（x= 0.003），获得了0.50的最大ZT值（在648 K），这比未掺杂的Cu 3SbSe 4的ZT值高约47%。
In doped Cu3Sb1-xInxSe4(x= 0, 0.002, 0.003 and 0.004) compounds have been fabricated via a combined process of melting-pulverization-hot pressing. Effect of In doping on their thermoelectric properties have been explored and it reveals that In occupies the site of Sb and plays a role of acceptor dopant. With the increase of In doping content, the electrical resistivity and Seebeck coefficient decrease, and the power factor is obviously improved at elevated temperature compared with un-doped Cu3SbSe4. Meanwhile, the thermal conductivity is also reduced due to the extra phonon scattering by point defects introduced by In doping. As a consequence, a maximum ZT value of 0.50 (at 648 K) is obtained for the doped sample (x= 0.003), which is about 47% higher than that of the un-doped Cu3SbSe4.