Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films
Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films
复制标题
DOI：
10.1063/1.4792689
复制
发表时间：
2013-02
影响因子：
4
通讯作者：
Y. Hou;Zhaoyue Lü;Tiansong Pu;Y. Zhang;Guoqiang Xu;Haisheng Xu
中科院分区：
文献类型：
--
作者：
Y. Hou;Zhaoyue Lü;Tiansong Pu;Y. Zhang;Guoqiang Xu;Haisheng Xu
研究了聚偏氟乙烯-三氟乙烯(P(VDF-TrFE))共聚物铁电超薄膜在不同脉冲工艺下的偏振开关行为。具有一定开关方向和压印方向的薄膜，其开关速度随压印时间的增加而增大。对这些过程的内部电场进行了很好的分析，发现铁电层中的有效电场和电荷陷阱态对开关行为有很大的影响。这一结果为基于P(VDF-TrFE)共聚物超薄膜的铁电随机存储器的优化设计提供了一条有效的途径。
The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.