Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers
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硅晶圆上的亚 10 纳米极薄体 InGaAs 绝缘体 MOSFET，具有超薄 $hbox{Al}_{2}hbox{O}_{3}$ 埋氧化层
DOI：
10.1109/led.2011.2158568
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发表时间：
2011
影响因子：
4.9
通讯作者：
S. Takagi
中科院分区：
文献类型：
--
作者：
M. Yokoyama;R. Iida;Sanghyeon Kim;N. Taoka;Y. Urabe;H. Takagi;T. Yasuda;H. Yamada;N. Fukuhara;M. Hata;M. Sugiyama;Y. Nakano;M. Takenaka;S. Takagi
我们在硅晶片上展示了亚10nm极薄体（ETB） InGaAs-on-insulator (InGaAs-OI) nmosfet，采用直接晶片键合工艺制备了Al<sub> </sub>O<sub>3</sub>超薄埋地氧化物（UTBOX）层。我们制备了通道厚度为9 nm和3.5 nm的ETB InGaAs-OI nmosfet。当掺杂浓度（n <sub>D</sub>）为10<sup>19</sup> cm<sup>-3</sup>时，9 nm厚的ETB InGaAs-OI mosfet的电子迁移率峰值为912 cm<sup>2</sup>/V·s，当表面载流子密度（n <sub>s</sub>）为3 ×10<sup>12</sup> cm<sup>-2</sup>时，相对于Si nMOSFET的迁移率增强因子为1.7倍。此外，还发现由于Al<sub>2</sub>O<sub>3</sub> UTBOX层，双栅操作提高了截止性能。因此，在3.5 nm厚的ETB InGaAs-OI nmosfet中获得了最高通断电流与最低通断电流（I<sub>on</sub>/I<sub>off</sub>）之比约为10<sup>7</sup>。这些结果表明，高迁移率的III-V型nmosfet甚至可以在10-nm厚的通道中实现。
We have demonstrated sub-10-nm extremely thin body (ETB) InGaAs-on-insulator (InGaAs-OI) nMOSFETs on Si wafers with Al<sub>2</sub>O<sub>3</sub> ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding process. We have fabricated the ETB InGaAs-OI nMOSFETs with channel thicknesses of 9 and 3.5 nm. The 9-nm-thick ETB InGaAs-OI n MOSFETs with a doping concentration (N<sub>D</sub>) of 10<sup>19</sup> cm<sup>-3</sup> exhibit a peak electron mobility of 912 cm<sup>2</sup>/V·s and a mobility enhancement factor of 1.7 times against the Si nMOSFET at a surface carrier density (N<sub>s</sub>) of 3 ×10<sup>12</sup> cm<sup>-2</sup>. In addition, it has been found that, owing to Al<sub>2</sub>O<sub>3</sub> UTBOX layers, the double-gate operation improves the cutoff properties. As a result, the highest on-current to the lowest off-current (I<sub>on</sub>/I<sub>off</sub>) ratio of approximately 10<sup>7</sup> has been obtained in the 3.5-nm-thick ETB InGaAs-OI nMOSFETs. These results indicate that the high-mobility III-V nMOSFETs can be realized even in sub-10-nm-thick channels.