Schottky barrier characteristics of Pt contacts to n-type InGaN
Schottky barrier characteristics of Pt contacts to n-type InGaN
复制标题
DOI：
10.1063/1.2187274
复制
发表时间：
2006-04-01
影响因子：
3.2
通讯作者：
Seong, TY
中科院分区：
文献类型：
--
作者：
Jang, JS;Kim, D;Seong, TY
用电流-电压(I-V)和电容-电压(C-V)方法研究了铂与n-InGaN接触的肖特基势垒行为。研究发现，利用I-V数据由热电子发射(TE)和热电子场发射(TFE)模式确定的肖特基势垒高度(SBHs)有很大不同。而TFE模式得到的SBHs与理论计算值相当接近，与C-V方法得到的结果符合得很好。TE模和TFE模计算的SBHs和理想因子随退火温度的升高而减小。根据InGaN表面附近存在不同类型的本征点缺陷，描述和讨论了TE模和TFE模得到的不同的SBH，SBH的退火温度依赖性，以及理想因子。(C)2006年美国物理研究所。
Schottky barrier behaviors of Pt contacts to n-InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) methods. It is found that the Schottky barrier heights (SBHs) determined by thermionic emission (TE) and thermionic field emission (TFE) modes using the I-V data are quite different from each other. However, the SBHs obtained by the TFE mode are fairly similar to theoretically calculated values, which are in good agreement with the results obtained by the C-V method. It is also shown that the SBHs and the ideality factors calculated by the TE and TFE modes decrease with increasing annealing temperature. The different SBHs obtained by the TE and TFE modes, the annealing temperature dependence of the SBHs, and the ideality factors are described and discussed in terms of the presence of different types of native point defects near the InGaN surface. (c) 2006 American Institute of Physics.