Solution-processed organic field-effect transistors and unipolar inverters using self-assembled interface dipoles on gate dielectrics
Solution-processed organic field-effect transistors and unipolar inverters using self-assembled interface dipoles on gate dielectrics
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DOI：
10.1021/la702409m
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发表时间：
2007-12-18
期刊：
影响因子：
3.9
通讯作者：
West, James E.
中科院分区：
文献类型：
--
作者：
Huang, Cheng;Katz, Howard E.;West, James E.
Self-assembled monolayers (SAMs) of polarized and nonpolarized organosilane molecules on gate insulators induced tunable threshold voltage shifting and current modulation in organic field-effect transistors (OFETs) made from solution-deposited 5,5'-bis(4-hexylphenyl)-2,2'-bithiophene (6PTTP6), defining depletion-mode and enhancement-mode operation. p-Channel inverters were made from pairs of OFETs with all enhancement-mode driver and a depletion-mode load to implement full-swing and high-gain organic logic circuits. The experimental results indicate that the shift of the transfer characteristics is governed by the built-in electric field of the SAM. The effect of surface functional groups affixed to the dielectric substrate on the grain appearance and film mobility is also determined.
