Ferromagnet (MnAs)/III–V semiconductor hybrid structures
Ferromagnet (MnAs)/III–V semiconductor hybrid structures
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DOI：
10.1088/0268-1242/17/4/306
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发表时间：
2002-04
影响因子：
1.9
通讯作者：
Masaaki Tanaka
中科院分区：
文献类型：
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作者：
Masaaki Tanaka
铁磁体/半导体杂化结构具有磁性和自旋相关功能，并且与半导体器件结构具有良好的相容性，因此作为“半导体自旋电子学”的人工材料具有很大的吸引力和应用前景。综述了分子束外延（MBE）生长铁磁（MnAs）/III-V半导体层状异质结构和纳米颗粒结构的研究进展，以及它们的磁性、磁输运和磁光性质。我们表明，通过仔细控制MBE生长和加工，可以在室温下实现一些有用的磁性或自旋相关的功能。
Ferromagnet/semiconductor hybrid structures are attractive and promising as artificial materials for 'semiconductor spintronics', because they can possess magnetic and/or spin-related functions and they have excellent compatibility with semiconductor device structures. We review our studies on the molecular beam epitaxy (MBE) growth of ferromagnet (MnAs)/III–V semiconductor layered heterostructures and nanoscale granular structures, and their magnetic, magneto-transport and magneto-optical properties. We show that, by careful control of MBE growth and processing, some useful magnetic or spin-related functions can be realized at room temperature.