Combined Effects of $^{60}$Co Dose and High Frequency Interferences on a Discrete Bipolar Transistor
Combined Effects of $^{60}$Co Dose and High Frequency Interferences on a Discrete Bipolar Transistor
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DOI：
10.1109/tns.2012.2227276
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发表时间：
2012-12
影响因子：
1.8
通讯作者：
A. Doridant;J. Raoult;S. Jarrix;A. Blain;P. Hoffmann;N. Chatry;P. Calvel;L. Dusseau
中科院分区：
文献类型：
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作者：
A. Doridant;J. Raoult;S. Jarrix;A. Blain;P. Hoffmann;N. Chatry;P. Calvel;L. Dusseau
本文涉及受到双重攻击的双极晶体管：剂量辐射和高频干扰。电磁干扰以非接触方式注入设备周围的近场区域。干扰的参数是功率和频率，后者很大程度上超出了晶体管的工作频带。由于整流以及一定程度上的电流拥挤，晶体管的输出电压会发生变化。显示了基础偏置设置对于电压变化类型的重要性。用 60Co 源照射后，电压输出会在电磁干扰下发生变化，但有时与最初测量的相反。从物理角度强调了辐射对电磁敏感性的影响。最后给出了磁化率预测的初步仿真结果，并对所使用的晶体管模型的局限性进行了讨论。
This paper concerns bipolar transistors subject to a double aggression: dose irradiation and high-frequency interference. The electromagnetic interference is injected in a contactless way in the near-field zone around the device. Parameters of the interference are power and frequency, the latter largely out of band of operation of the transistors. The output voltage of the transistor exhibits changes, due to rectification and to some extent to current crowding. The importance of the base bias set-up for the type of change occurring in voltage is displayed. After irradiation with a 60Co source, the voltage output will change under electromagnetic interference but sometimes in an opposite way as initially measured. The impact of the irradiation with respect to electromagnetic susceptibility is highlighted from a physical point of view. Finally preliminary results of simulation for susceptibility prediction are given and a discussion is given on the limits of the transistor model used.