Photoluminescence enhancement of InP treated with activated hydrogen
Photoluminescence enhancement of InP treated with activated hydrogen
复制标题
活性氢处理 InP 的光致发光增强
DOI：
10.1016/0169-4332(88)90096-7
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发表时间：
1988
影响因子：
6.7
通讯作者：
M. Garrigues
中科院分区：
文献类型：
--
作者：
P. Viktorovitch;F. Benyahia;C. Santinelli;R. Blanchet;P. Leyral;M. Garrigues
在这项工作中报道了一个大的增强的光致发光强度的（100）取向的InP表面暴露后，活化氢，表明表面复合率急剧下降。它示出，使用电容-电压测量上进行的金属-绝缘体-半导体结构，氢处理的结果也在界面费米能级的强钉扎。这些现象被解释在以下基础上：（i）被认为是磷悬挂键的活性复合中心的氢物种的中和;（ii）由于形成挥发性的磷氢化物化合物释放多余的铟原子，钉扎表面状态的创建。
A large enhancement of the photoluminescence intensity emitted by a (100)-oriented InP surface after exposure to activated hydrogen, indicating a sharp reduction of the surface recombination rate is reported in this work. It is shown, using capacitance-voltage measurements performed on metal-insulator-semiconductor structures, that the hydrogen treatment results also in a strong pinning of the interface Fermi level. These phenomena are interpreted on the following basis: (i) neutralization by hydrogen species of active recombination centers which are deemed to be phosphorus dangling bonds; (ii) creation of pinning surface states due to the formation of volatile phosphorus hydride compounds freeing excess indium atoms.