Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4
Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4
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ZnGeGa2N4 的金属有机化学气相沉积
DOI：
10.1021/acs.cgd.9b00995
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发表时间：
2020
影响因子：
3.8
通讯作者：
K. Kash
中科院分区：
文献类型：
--
作者：
Benthara Hewage Dinushi Jayatunga;Md Rezaul Karim;R. Lalk;O. Ohanaka;W. Lambrecht;Hongping Zhao;K. Kash
ZnGeN2和GaN等比例的合金可以形成保持八元规则的四价氮化物半导体ZnGeGa2N4。以二乙基锌、锗、三甲基镓和氨为前驱体，在（1102）Al2O3 （r-面蓝宝石）、（0001）Al2O3 （c-面蓝宝石）和（0001）GaN/Al2O3上沉积了针对该成分的合金单晶薄膜。在c面蓝宝石和GaN模板上生长的薄膜沿c轴生长，在r面蓝宝石上生长的薄膜沿正交[010]轴生长。通过x射线衍射、场发射扫描电镜和原子力显微镜研究了生长温度（550 ~ 700℃）、衬底选择、三甲基镓和锗流速对薄膜组成和形貌的影响。Zn/Ge原子比随生长温度的升高而减小，随三甲基镓流速的增大而增大。增长率，w…
An alloy of ZnGeN2 and GaN in equal proportions can form the octet-rule-preserving quaternary heterovalent nitride semiconductor ZnGeGa2N4. Single-crystal films of the alloy targeting this composition were deposited on (1102) Al2O3 (r-plane sapphire), (0001) Al2O3 (c-plane sapphire), and (0001) GaN/Al2O3 by metal–organic chemical vapor deposition using the precursors diethylzinc, germane, trimethylgallium, and ammonia. The growth directions were along the c-axis for films grown on the c-plane sapphire and GaN templates, as well as along the orthorhombic [010] axis for films grown on r-plane sapphire. The effects of varying the growth temperature from 550 to 700 °C, choice of substrate, and trimethylgallium and germane flow rates on film composition and morphology were examined by X-ray diffraction, field-emission scanning electron microscopy, and atomic force microscopy. The Zn/Ge atomic ratios were observed to decrease with growth temperature but increase with trimethylgallium flow rate. Growth rates, w...