Transport characterization of Schottky in-plane gate Al0.3Ga0.7As/GaAs quantum wire transistors realized by in-situ electrochemical process
Transport characterization of Schottky in-plane gate Al0.3Ga0.7As/GaAs quantum wire transistors realized by in-situ electrochemical process
复制标题
原位电化学工艺实现肖特基面内栅极Al0.3Ga0.7As/GaAs量子线晶体管的输运特性
DOI：
10.1143/jjap.34.6971
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
H. Okada;T. Hashizume;H. Hasegawa
研究了用电化学方法原位制备的Al0.3Ga0.7As/GaAs肖特基面内栅（IPG）量子线晶体管的低温输运特性。该器件表现出良好的场效应晶体管（FET）特性，具有出色的栅极控制和完全夹断。在4K下，可以清楚地观察到以2 e2/h为单位的量子化电导。第一个平台持续到40 K。Shubnikov-de哈斯振荡测量显示载流子密度对栅极偏置的依赖性非常弱，这表明肖特基IPG在不改变片载流子密度的情况下控制线宽度。磁场的应用拓宽了电导平台。在静电约束势的谐波近似下，得到子带间距为4-5 meV。
The low-temperature transport properties of the novel Al 0.3 Ga 0.7 As/GaAs Schottky in-plane gate (IPG) quantum wire transistor realized by the in-situ electrochemical process were studied. The device showed good field-effect transistor (FET) characteristics with excellent gate control and complete pinch-off. Quantized conductance in the units of 2e 2 /h was clearly seen at 4 K. The first plateau persisted up to 40 K. Shubnikov-de Haas oscillation measurements showed an extremely weak dependence of the carrier density on the gate bias, indicating that the Schottky IPG controls the wire width without changing the sheet carrier density. Application of a magnetic field widened the conductance plateaus. Under harmonic approximation for the electrostatic confinement potentials, a subband spacing of ħω 0 = 4-5 meV was obtained.