70–105 GHz wideband GaN power amplifiers
70–105 GHz wideband GaN power amplifiers
复制标题
70–105 GHz 宽带 GaN 功率放大器
DOI:
--
复制
发表时间:
2012
期刊:
影响因子:
--
通讯作者:
D. Chow
中科院分区:
文献类型:
--
作者:
A. Margomenos;A. Kurdoghlian;M. Micovic;K. Shinohara;D. Brown;R. Bowen;I. Milosavljevic;R. Grabar;C. Butler;A. Schmitz;P. Willadsen;M. Madhav;D. Chow
We report a new 70-105 GHz wideband GaN power amplifier which can enable the next generation of E and W-band transmitter modules. Two versions of the amplifier are presented. Across the 70-105 GHz range the balanced design demonstrates excellent S11 and S22 at -20 dB, small signal gain above 16 dB, output power above 20 dBm with associated gain higher than 16 dB and power added efficiency over 6%. By increasing the compression levels of the amplifier at 90 GHz we achieved output power of 24.5 dBm with associated gain of 12.4 dB and power added efficiency of 13.2%. The presented amplifier can be utilized in wideband transmitter modules covering E and W-band or in application specific modules covering narrower sections of the band (71-76 GHz, 81-86 GHz, 90-96 GHz) where they can be combined with higher power GaN amplifiers.