Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
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DOI：
10.1143/jjap.30.l1708
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发表时间：
1991-10
影响因子：
1.5
通讯作者：
S. Nakamura;Masayuki Senoh Masayuki Senoh-Masayuki-Senoh;Takashi Mukai Takashi Mukai-Takashi-Mukai
中科院分区：
文献类型：
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作者：
S. Nakamura;Masayuki Senoh Masayuki Senoh-Masayuki-Senoh;Takashi Mukai Takashi Mukai-Takashi-Mukai
在蓝宝石衬底上生长了具有GaN缓冲层的Mg掺杂GaN薄膜。霍尔效应测试表明，室温下GaN薄膜的空穴浓度为2×1015/cm 3，空穴迁移率为9 cm 2/V·s，电阻率为320 Ω·cm。经低能电子束辐照（LEEBI）处理后，室温下各值分别为3×1018/cm 3、9 cm 2/V·s和0.2 Ω·cm。空穴浓度的这个值是有史以来报道的p型GaN膜中最高的，电阻率的值是最低的。
Mg-doped GaN films were grown with GaN buffer layers on a sapphire substrate. Hall-effect measurement of as-grown GaN films showed that the hole concentration was 2×1015/cm3, the hole mobility was 9 cm2/V·s and the resistivity was 320 Ω·cm at room temperature. After the low-energy electron-beam irradiation (LEEBI) treatment, each value became 3×1018/cm3, 9 cm2/V·s and 0.2 Ω·cm at room temperature, respectively. This value of the hole concentration is the highest ever reported for the p-type GaN films and that of the resistivity is the lowest.