InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature
InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature
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DOI：
10.1063/1.4907002
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发表时间：
2015-01-26
影响因子：
4
通讯作者：
Kamp, Martin
中科院分区：
文献类型：
--
作者：
Dallner, Matthias;Hau, Florian;Kamp, Martin
报道了在InAs衬底上生长的阈值电流密度低于1 kA/cm ~ 2的带间级联激光器。研究了两种不同长度电子注入器的级联设计。在电子注入器中使用3个InAs量子威尔斯（QW）的级联设计，在室温下，在7 μ m的记录波长下，在有源区中包含22个级的器件表现出940 A/cm（2）的阈值电流密度。通过研究电子注入器中具有2个量子阱的级联设计的级数对器件性能的影响，对于30级器件，阈值电流密度进一步降低到800 A/cm（2）。(C)2015 AIP Publishing LLC.
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm(2) are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm(2) at a record wavelength of 7 mu m for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, a further reduction of the threshold current density to 800 A/cm(2) was achieved for a 30 stage device. (C) 2015 AIP Publishing LLC.