Modeling of Electron Devices Based on 2-D Materials
Modeling of Electron Devices Based on 2-D Materials
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DOI：
10.1109/ted.2018.2854902
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发表时间：
2018-10-01
影响因子：
3.1
通讯作者：
Fiori, G.
中科院分区：
文献类型：
--
作者：
Marin, E. G.;Perucchini, M.;Fiori, G.
石墨烯和相关二维材料的出现在过去14年中吸引了电子器件研究界的兴趣。提高晶体管性能的可能性以及用2-D材料及其异质结构构建新型器件概念的前景已经引起了强烈的实验兴趣，这需要建模的持续支持。在本文中，我们回顾了基于二维材料的电子器件模拟的最新技术。我们概述了电子能带结构建模和研究电子输运的主要方法，并根据精度和计算成本对它们进行了分类。我们简要地讨论，如何将它们结合在一个多尺度的方法，以提供一个定量的了解的机制，确定电子设备的操作，我们研究这些方法的应用到不同的家庭的2-D材料。最后，我们简要地分析了主要的开放式挑战的建模2-D为基础的电子设备。
The advent of graphene and related 2-D materials has attracted the interest of the electron device research community in the past 14 years. The possibility to boost the transistor performance and the prospects to build novel device concepts with 2-D materials and their heterostructures has awakened a strong experimental interest that requires continuous support from modeling. In this paper, we review the state of the art in the simulation of electron devices based on 2-D materials. We outline the main methods to model the electronic bandstructure and to study electron transport, classifying them in terms of accuracy and computational cost. We briefly discuss, how they can be combined in a multiscale approach to provide a quantitative understanding of the mechanisms determining the operation of electron devices, and we examine the application of these methods to different families of 2-D materials. Finally, we shortly analyze the main open challenges of modeling 2-D-based electron devices.