Reactive vacuum vapor deposition of aluminum oxide thin films by an air-to-air metallizer
Reactive vacuum vapor deposition of aluminum oxide thin films by an air-to-air metallizer
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通过空对空镀膜机进行氧化铝薄膜的反应真空气相沉积
DOI：
10.1116/1.2198871
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
S. Kamikawa
中科院分区：
文献类型：
--
作者：
Toshiro Kobayashi;Y. Itoh;Y. Nakano;E. Hirai;R. Hashimoto;S. Kamikawa
通过直接模拟蒙特卡罗方法和实验研究了在空气-空气金属化器上反应真空气相沉积氧化铝薄膜的过程。将计算结果与氧化铝薄膜厚度的测量结果进行比较，可以发现：(a)到达衬底的Al原子的经验通量低于计算结果，这可能是由于在蒸发表面上形成了氧化铝；(b)由薄膜厚度计算得到的氧气量是计算通量的两倍。可能是由于氧气在蒸发表面和侧壁的黏附系数降低、气相反应被低估、网目尺寸过大、膜密度被高估以及亚化学计量氧化物的形成等因素的影响。该金属化剂在严格控制氧气供应的条件下，在塑料薄膜基底上沉积氧化铝薄膜，具有良好的透明性、2.7cc / m2day的透氧率和较低的透氧率。
Reactive vacuum vapor deposition of aluminum oxide thin films by an air-to-air metallizer was examined via the direct simulation Monte Carlo method and experiments. Comparison of the calculated results with the measurements of the Al oxide thin film’s thickness showed (a) that the empirical flux of Al atoms arriving at the substrate is lower than the calculated result, probably due to the formation of Al oxide on the evaporation surface and (b) that the amount of oxygen calculated from the thickness of the film is twice the amount corresponding to the calculated flux, probably due to the effects of the decreased sticking coefficient of oxygen on the evaporating surface and sidewall, underestimated gas phase reaction, large mesh size overestimated film density, and formation of substoichiometric oxide. Aluminum oxide thin films deposited on plastic film substrates by this metallizer under strictly controlled O2 supply conditions have good transparency, an oxygen transmission rate of 2.7cc∕m2day, and an ele...