Recombination dynamics in GaInN/GaN quantum wells
Recombination dynamics in GaInN/GaN quantum wells
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DOI：
10.1088/1361-6641/ab2788
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发表时间：
2019-06
影响因子：
1.9
通讯作者：
A. Hangleiter
中科院分区：
文献类型：
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作者：
A. Hangleiter
GaInN/GaN量子威尔斯现在是可见光发射器件如发光二极管和激光二极管的核心。电荷载流子的辐射复合提供了光发射的基础，而非辐射复合过程构成了不需要的损耗机制。在这篇综述中，辐射和非辐射复合过程的物理进行了详细的讨论，发光的III族氮化物量子威尔斯的许多奇特的属性。
GaInN/GaN quantum wells are now at the heart of visible light emitting devices such as light emitting diodes and laser diodes. Radiative recombination of charge carriers provides the basis of light emission, while non-radiative recombination processes constitute unwanted loss mechanisms. In this review, the physics of both radiative and non-radiative recombination processes is discussed in detail, shining light on many peculiar properties of III-nitride quantum wells.