Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
复制标题
AlGaN/GaN 高电子迁移率晶体管退化机制的光学研究：非辐射复合中心的生成
DOI：
--
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
M. Kuball
中科院分区：
文献类型：
--
作者：
C. Hodges;N. Killat;S. Kaun;M. Wong;F. Gao;T. Palacios;U. Mishra;J. Speck;D. Wolverson;M. Kuball
研究了AlGaN/GaN高电子迁移率晶体管在夹断条件下的退化机理。已知与栅极漏电流相关的热点形式的电致发光（EL）的局部发射的位点被示出为在器件应力期间在AlGaN器件层中产生非辐射复合中心的结果。来自热点位置的EL包含来自器件沟道中的电荷载流子的加速的热载流子发射和与缺陷相关的跃迁。通过所产生的中心的栅极泄漏是观察EL热点的最可能的机制。
Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.