Increased open‐circuit voltage of ZnO nanowire/PbS quantum dot bulk heterojunction solar cells with solution‐deposited Mg(OH)2 interlayer
Increased open‐circuit voltage of ZnO nanowire/PbS quantum dot bulk heterojunction solar cells with solution‐deposited Mg(OH)2 interlayer
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DOI：
10.1002/pssr.201600220
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发表时间：
2016-10
期刊：
影响因子：
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通讯作者：
Shuaipu Zang;Yinglin Wang;Wei-Sung Su;Hancheng Zhu;Gang Li;Xintong Zhang;Yichun Liu
中科院分区：
文献类型：
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作者：
Shuaipu Zang;Yinglin Wang;Wei-Sung Su;Hancheng Zhu;Gang Li;Xintong Zhang;Yichun Liu
为解决体异质结(BHJ)PbS胶体量子点太阳电池(CQDSCs)中界面电荷复合问题，在纳米线上沉积了一层超薄的氢氧化镁薄膜。这种氢氧化镁过渡层有效地钝化了氧化锌纳米线的表面缺陷，并在氧化锌/PbS界面提供了隧道势垒。结果表明，掺入氢氧化镁的BHJ CQDSCs的电子寿命显著延长，开路电压增加，这在很大程度上抑制了界面处的电荷复合。通过对氢氧化镁中间层厚度的精心优化，最终使∼的挥发分含量提高了33%，∼的功率转换效率提高了25%。
An ultrathin Mg(OH)2 layer was solution‐deposited onto the ZnO nanowires to solve the problem of interfacial charge recombination, caused by the increase of interfacial area in bulk heterojunction (BHJ) PbS colloidal quantum dot solar cells (CQDSCs). This Mg(OH)2 interlayer efficiently passivated the surface defects of ZnO nanowires and provided tunnel barrier at ZnO/PbS interface. As a result, the charge recombination at ZnO/PbS interface was largely suppressed, proved by the significantly elongated electron lifetime and the increased open‐circuit voltage of the Mg(OH)2‐involved BHJ CQDSCs. Careful thickness optimization of Mg(OH)2 interlayer finally brought a ∼33% increase in Voc and ∼25% improvement in power conversion efficiency.